Kim, Kyung-Ho Um, Doo-Seung Lee, Hochan Lim, Seongdong Chang, Joonyeon Koo, Hyun Cheol Oh, Min-Wook Ko, Hyunhyub Kim, Hyung-jun 2024-01-20T11:31:57Z 2024-01-20T11:31:57Z 2021-09-04 2013-10 1936-0851 https://pubs.kist.re.kr/handle/201004/127631 We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm(2)/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (alpha) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the a value Increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations Indicate that the main causes of the large improvement in a are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented In this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology. English AMER CHEMICAL SOC INITIO MOLECULAR-DYNAMICS HETEROGENEOUS INTEGRATION SEMICONDUCTOR Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates Article 10.1021/nn403715p 1 ACS NANO, v.7, no.10, pp.9106 - 9114 ACS NANO 7 10 9106 9114 scie scopus 000326209100083 2-s2.0-84886996629 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article INITIO MOLECULAR-DYNAMICS HETEROGENEOUS INTEGRATION SEMICONDUCTOR spin field-effect transistor epitaxial transfer spin-orbit interaction high-electron mobility transistor selective wet-etching