Shim, Seong Hoon Kim, Kyung-Ho Kim, Hyung-Jun Lee, Yun-Hi Chang, Joonyeon 2024-01-20T11:33:56Z 2024-01-20T11:33:56Z 2021-09-04 2013-09 1533-4880 https://pubs.kist.re.kr/handle/201004/127730 The anisotropic magnetoresistance of a [100] oriented Fe stripe grown on MgO/GaAs was investigated in order to elucidate the magnetization switching of patterned Fe. A 15 nm thick Fe film was epitaxially grown on MgO/GaAs layers using molecular beam epitaxy and a 50 mu m x 4 mu M shaped Fe stripe was patterned along its magnetic easy axis of [100]. Negative (positive) resistance peaks appear at room (low) temperature in magnetoresistance measurement. A reversal in sign of the peak was evidently observed with decreasing temperature. Such a reversal of resistance peak is caused by the competition between Lorentz force (ordinary) and spin-orbit (extraordinary) dominated scattering processes in a magnetic domain, which is significantly affected by temperature. English AMER SCIENTIFIC PUBLISHERS MAGNETIZATION IRON Anisotropic Magnetoresistance of an Epitaxial Fe Stripe Grown on MgO/GaAs Article 10.1166/jnn.2013.7721 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6333 - 6335 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 13 9 6333 6335 scie scopus 000323628900074 2-s2.0-84885460827 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article MAGNETIZATION IRON Anisotropic Magnetoresistance (AMR) Ordinary Magnetoresistance (OMR) Fe/MgO/GaAs