Yoon, Hana Kim, Si-in Lee, Sunghun In, Juneho Kim, Jihwan Ryoo, Hyunseong Noh, Jae-Hong Ahn, Jae-Pyoung Jo, Younghun Choo, Jaebum Kim, Bongsoo 2024-01-20T12:00:19Z 2024-01-20T12:00:19Z 2022-01-25 2013-08 2050-7526 https://pubs.kist.re.kr/handle/201004/127788 We have synthesized single-crystalline horizontal and free-standing monoclinic CoGe nanowire (NW) arrays on high-k dielectric Y-stabilized ZrO2 (110) substrates via a chemical vapor transport process without using any catalysts. Horizontal NWs are grown epitaxially on the substrate. Three-dimensionally (3D)-kinked NWs are grown from the tip of the horizontal NWs homoepitaxially initiated by rotational twinning. Electrical measurements show that both horizontal and 3D-kinked CoGe NWs have low resistivity. The 3D-kinked NWs as well as free-standing metallic CoGe NWs integrated on Y-stabilized ZrO2 substrates could find applications as effective on-chip interconnects and nanoelectrodes for highly integrated nanoelectronic devices and as platforms for fuel cells and as efficient catalysts. English ROYAL SOC CHEMISTRY Three-dimensionally kinked high-conducting CoGe nanowire growth induced by rotational twinning Article 10.1039/c3tc31214c 1 JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.39, pp.6259 - 6264 JOURNAL OF MATERIALS CHEMISTRY C 1 39 6259 6264 N scie scopus 000324757400013 2-s2.0-84884503909 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article MAGNETIC-PROPERTIES FIELD-EMISSION ARRAYS NANOSTRUCTURES GERMANIDE DIAMETER