Song, Sunghoon Jang, Jingon Ji, Yongsung Park, Sungjun Kim, Tae-Wook Song, Younggul Yoon, Myung-Han Ko, Heung Cho Jung, Gun-Young Lee, Takhee 2024-01-20T12:00:48Z 2024-01-20T12:00:48Z 2021-09-05 2013-08 1566-1199 https://pubs.kist.re.kr/handle/201004/127814 We fabricated an 8 x 8 cross-bar array-type organic nonvolatile memory devices on twistable poly(ethylene terephthalate) (PET) substrate. A composite of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) was used as the active material for the memory devices. The organic memory devices showed a high ON/OFF current ratio, reproducibility with good endurance cycle, and stability with long retention time over 5 x 10(4) s on the flat substrate. The device performance remained well under the twisted condition with a twist angle up to similar to 30 degrees. The twistable organic memory device has a potential to be utilized in more complex flexible organic device configurations. (C) 2013 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV THIN-FILMS TRANSISTORS POLYMER CIRCUITS EFFICIENT NANOPARTICLES BISTABILITY INTEGRATION ELEMENTS Twistable nonvolatile organic resistive memory devices Article 10.1016/j.orgel.2013.05.003 1 ORGANIC ELECTRONICS, v.14, no.8, pp.2087 - 2092 ORGANIC ELECTRONICS 14 8 2087 2092 scie scopus 000320599200024 2-s2.0-84878867396 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article THIN-FILMS TRANSISTORS POLYMER CIRCUITS EFFICIENT NANOPARTICLES BISTABILITY INTEGRATION ELEMENTS Organic memory Twistable Nonvolatile Resistive memory