Ahn, Hyung-Woo Jeong, Doo Seok Cheong, Byung-ki Lee, Hosuk Lee, Hosun Kim, Su-dong Shin, Sang-Yeol Kim, Donghwan Lee, Suyoun 2024-01-20T12:01:45Z 2024-01-20T12:01:45Z 2021-09-05 2013-07-22 0003-6951 https://pubs.kist.re.kr/handle/201004/127860 We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device. (C) 2013 AIP Publishing LLC. English AMER INST PHYSICS TAILS Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films Article 10.1063/1.4816349 1 APPLIED PHYSICS LETTERS, v.103, no.4 APPLIED PHYSICS LETTERS 103 4 scie scopus 000322406600076 2-s2.0-84884992229 Physics, Applied Physics Article TAILS threshold switching localized states GeSe films