Kim, J. Y. Yoon, J. J. Kim, T. J. Kim, Y. D. Lee, E. H. Bae, M. H. Song, J. D. Choi, W. J. Liang, C. -T. Chang, Y. -C. 2024-01-20T12:02:17Z 2024-01-20T12:02:17Z 2021-09-04 2013-07-01 0003-6951 https://pubs.kist.re.kr/handle/201004/127886 We report pseudodielectric function data <epsilon > = <epsilon(1)> + i <epsilon(2)> from 0.74 to 6.48 eV of oxide-free AlAsSb alloys that are the closest representation to date of the intrinsic bulk dielectric response epsilon of the material. Measurements were performed on 1.3 mu m thick films grown on (001) GaAs substrates by molecular beam epitaxy. Data were obtained with the films in situ to avoid oxidation artifacts. Critical-point structures were identified by band-structure calculations done with the linear augmented Slater-type orbital method. Crossings of transitions at the Gamma- and X-points and the Gamma- and L-points with composition were observed. (C) 2013 AIP Publishing LLC. English AMER INST PHYSICS SPECTROSCOPIC ELLIPSOMETRY DIELECTRIC FUNCTION QUANTUM-WELLS ALAS Optical properties of AlAsxSb1-x alloys determined by in situ ellipsometry Article 10.1063/1.4812834 1 APPLIED PHYSICS LETTERS, v.103, no.1 APPLIED PHYSICS LETTERS 103 1 scie scopus 000321497200009 2-s2.0-84880290205 Physics, Applied Physics Article SPECTROSCOPIC ELLIPSOMETRY DIELECTRIC FUNCTION QUANTUM-WELLS ALAS AlAsSb ellipsometry MBE