Kim, Su-Dong Ahn, Hyung-Woo Shin, Sang Yeol Jeong, Doo Seok Son, Seo Hee Lee, Hosun Cheong, Byung-ki Shin, Dong Wook Lee, Suyoun 2024-01-20T12:03:15Z 2024-01-20T12:03:15Z 2021-09-01 2013-07 2162-8742 https://pubs.kist.re.kr/handle/201004/127936 We studied GexSe1-x for the potential application in the Ovonic Threshold Switching (OTS) device. We found that, as Ge concentration increased, the thermal stability was deteriorated while the device performances were improved. In addition, using Spectroscopic Ellipsometry (SE) technique, the energy gap (E-g) and the Urbach energy (E-U) were found to show non- monotonic dependences, with their minimum of about 1.0 eV of E-g for Ge0.6Se0.4 and 40 meV of E-U for Ge0.5Se0.5. These changes are consistent with the changes in device characteristics, which might be explained in terms of the change in the number of Se-Se bondings. (c) 2013 The Electrochemical Society. All rights reserved. English ELECTROCHEMICAL SOC INC ALLOYS Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices Article 10.1149/2.001310ssl 1 ECS SOLID STATE LETTERS, v.2, no.10, pp.Q75 - Q77 ECS SOLID STATE LETTERS 2 10 Q75 Q77 scie scopus 000322995700007 2-s2.0-84880442375 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article ALLOYS