Ahn, Hyung-Woo Jeong, Doo Seok Cheong, Byung-ki Kim, Su-dong Shin, Sang-Yeol Lim, Hyungkwang Kim, Donghwan Lee, Suyoun 2024-01-20T12:03:19Z 2024-01-20T12:03:19Z 2021-09-01 2013-07 2162-8742 https://pubs.kist.re.kr/handle/201004/127940 We performed a study on the scalability of Ovonic Threshold Switching (OTS) devices using an amorphous chalcogenide material, Ge0.4Se0.6. As the cell size decreased, the maximum driving current was estimated to be over 3 x 10(7) Lambda/cm(2), surpassing the state of the art devices based on crystalline Si. However, the threshold voltage (V-TH), the holding voltage (V-H), and the holding current (I-H) were observed to increase laying challenges to be resolved for developing non-destructive and low-power consuming selector devices. V-TH was found to be reduced by decreasing the thickness of GeSe film until 40 nm, below which it started to saturate. This might be associated with the Schottky barrier formed at the interface between the amorphous semiconductor and the metal electrode. (c) 2013 The Electrochemical Society. All rights reserved. English ELECTROCHEMICAL SOC INC A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt Article 10.1149/2.011309ssl 1 ECS SOLID STATE LETTERS, v.2, no.9, pp.N31 - N33 ECS SOLID STATE LETTERS 2 9 N31 N33 scie scopus 000321740400003 2-s2.0-84880399102 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article