Lee, Joohwi Cho, Deok-Yong Jung, Jisim Kim, Un Ki Rha, Sang Ho Hwang, Cheol Seong Choi, Jung-Hae 2024-01-20T12:03:40Z 2024-01-20T12:03:40Z 2021-09-05 2013-06-17 0003-6951 https://pubs.kist.re.kr/handle/201004/127954 The influence of structural disorder on the electronic structure of amorphous ZnSnO3 was examined by ab-initio calculations. The calculation results are compared with the experimental results using as-deposited and annealed ZnSnO3 films grown by atomic layer deposition. The O K-edge X-ray absorption spectroscopy, X-ray diffraction, and thin-film transistors were employed in the experiment. The conduction band minima of amorphous and crystalline ZnSnO3 mainly consisted of Sn 5s state, while a higher non-uniform localization of these states was observed in the amorphous phase compared with the crystalline counterpart. The experimental results coincide well with the theoretical results. (C) 2013 AIP Publishing LLC. English AMER INST PHYSICS TOTAL-ENERGY CALCULATIONS OXIDE TRANSISTORS STABILITY Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films Article 10.1063/1.4811788 1 APPLIED PHYSICS LETTERS, v.102, no.24 APPLIED PHYSICS LETTERS 102 24 scie scopus 000320962400052 2-s2.0-84879816229 Physics, Applied Physics Article TOTAL-ENERGY CALCULATIONS OXIDE TRANSISTORS STABILITY ZnSnO3 ab-initio calculations O K-edge X-ray