Kim, Beom Joon Lee, Hyo-Sang Lee, Joong Seok Cho, Sanghyeok Kim, Hyunjung Son, Hae Jung Kim, Honggon Ko, Min Jae Park, Sungnam Kang, Moon Sung Oh, Se Young Kim, BongSoo Cho, Jeong Ho 2024-01-20T12:04:01Z 2024-01-20T12:04:01Z 2021-09-05 2013-06-06 1932-7447 https://pubs.kist.re.kr/handle/201004/127971 We characterized the electrical properties of ambipolar polymer field-effect transistors (PFETs) based on the low-band-gap polymer, pNAPDO-DPP-EH. The polymer consisted of electron-rich 2,6-di(thienyl)naphthalene units with decyloxy chains (NAPDO) and electron-deficient diketopyrrolopyrrole units with 2-ethylhexyl chains (DPP-EH). The as-spun pNAPDO-DPP-EH PFET device exhibited ambipolar transport properties with a hole mobility of 3.64 X 10(-3) cm(2)/(V s) and an electron mobility of 0.37 X 10(-3) cm(2)/(V s). Thermal annealing of the polymer film resulted in a dramatic increase in the carrier mobility. Annealing at 200 degrees C yielded hole and electron mobilities of 0.078 and 0.002 cm(2)/(V s), respectively. The mechanism by which the mobility had improved was investigated via grazing incidence X-ray diffraction studies, atomic force microscopy, and temperature-dependent transport measurements. These results indicated that thermal annealing improved the polymer film crystallinity and promoted the formation of a longer-range lamellar structure that lowered the thermal activation energy for charge hopping. Thermal annealing, moreover, reduced charge trapping in the films and thus improved the electrical stability of the PFET device. This work underscores the fact that long-range ordering in a crystalline polymer is of great importance for efficient charge transport and high electrical stability. English American Chemical Society THIN-FILM TRANSISTORS HIGH-PERFORMANCE HIGH-MOBILITY SEMICONDUCTING POLYMERS N-CHANNEL DESIGN COPOLYMERS CIRCUITS HOLE Correlation between Crystallinity, Charge Transport, and Electrical Stability in an Ambipolar Polymer Field-Effect Transistor Based on Poly(naphthalene-alt-diketopyrrolopyrrole) Article 10.1021/jp400664r 1 The Journal of Physical Chemistry C, v.117, no.22, pp.11479 - 11486 The Journal of Physical Chemistry C 117 22 11479 11486 scie scopus 000320214800004 2-s2.0-84879347267 Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article THIN-FILM TRANSISTORS HIGH-PERFORMANCE HIGH-MOBILITY SEMICONDUCTING POLYMERS N-CHANNEL DESIGN COPOLYMERS CIRCUITS HOLE Polymer field-effect transistors Low band gap polymers Ambipolar transistors Electrical stability Crystalline High carrier mobility