Shin, Jae Cheol Kim, Do Yang Lee, Ari Kim, Hyo Jin Kim, Jae Hun Choi, Won Jun Kim, Hyun-Seok Choi, Kyoung Jin 2024-01-20T12:04:13Z 2024-01-20T12:04:13Z 2021-09-05 2013-06-01 0022-0248 https://pubs.kist.re.kr/handle/201004/127981 Spatial distribution of indium (In) atoms in ternary InxGa1-xAs nanowires (NWs) was investigated by the energy-dispersive X-ray spectroscopy, which were grown on Si (111) by metal-organic chemical vapor deposition. The NWs have a tapered morphology with thicker diameter and higher In composition in the bottom of NWs. However, decreasing growth temperature and Will ratio resulted in straight NWs with constant In composition throughout the NWs. This was attributed to enhanced deposition on the sidewall of the NW with higher In composition through the vapor-solid mode, leading to a core-shell structure consisting of low and high In-content layers. (C) 2013 Elsevier B.V. All rights reserved. English ELSEVIER LIGHT-EMITTING-DIODES CONTROLLED GROWTH ARRAYS EPITAXY DENSITY SHAPE INAS Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon Article 10.1016/j.jcrysgro.2013.02.025 1 JOURNAL OF CRYSTAL GROWTH, v.372, pp.15 - 18 JOURNAL OF CRYSTAL GROWTH 372 15 18 scie scopus 000319052400003 2-s2.0-84875867673 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article LIGHT-EMITTING-DIODES CONTROLLED GROWTH ARRAYS EPITAXY DENSITY SHAPE INAS Nanostructures Metalorganic vapor phase epitaxy Nanomaterials Semiconducting III-V materials