Shin, Jae Cheol Lee, Ari Mohseni, Parsian Katal Kim, Do Yang Yu, Lan Kim, Jae Hun Kim, Hyo Jin Choi, Won Jun Wasserman, Daniel Choi, Kyoung Jin Li, Xiuling 2024-01-20T12:04:41Z 2024-01-20T12:04:41Z 2021-09-05 2013-06 1936-0851 https://pubs.kist.re.kr/handle/201004/128005 One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAs(y)p(1-y) nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity across the entire 2 in. wafer and dramatic improvements in aspect ratio (>100) and area density (>5 x 10(8)/cm(2)). Heterojunction solar cells consisting of n-type InAsyP1-y (y = 0.75) and p-type Si achieve a conversion efficiency of 3.6% under air mass 1.5 illumination. This work demonstrates the potential for large-scale production of these nanowires for heterogeneous integration of optoelectronic devices. English AMER CHEMICAL SOC SOLAR-CELLS OPTICAL-PROPERTIES INGAAS NANOWIRES GROWTH PERFORMANCE GAAS DENSITY Wafer-Scale Production of Uniform InAsyP1-y Nanowire Array on Silicon for Heterogeneous Integration Article 10.1021/nn4014774 1 ACS NANO, v.7, no.6, pp.5463 - 5471 ACS NANO 7 6 5463 5471 scie scopus 000321093800084 2-s2.0-84879644256 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article SOLAR-CELLS OPTICAL-PROPERTIES INGAAS NANOWIRES GROWTH PERFORMANCE GAAS DENSITY MOCVD InAsyP1-y nanowire III-V semiconductor heterojunction