Shin, Jae Cheol Lee, Ari Kim, Hyo Jin Kim, Jae Hun Choi, Kyoung Jin Kim, Young Hun Kim, Nam Bae, Myung-Ho Kim, Ju-Jin Kim, Bum-Kyu 2024-01-20T12:04:48Z 2024-01-20T12:04:48Z 2021-09-05 2013-06 0374-4884 https://pubs.kist.re.kr/handle/201004/128011 Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to the lower leakage current and better field effect. However, the mobility of a NW gets smaller with decreasing diameter because surface scattering events of mobile carriers are increased. Therefore, the choice of a proper diameter is a key role for future high-performance transistors based on semiconductor NWs. Here, we control the diameters of catalyst-free InAs NWs grown at various growth temperatures by using metal-organic chemical vapor deposition to be in the range of 30 to 160 nm. The mobility of the fabricated InAs field-effect transistor increases with diameter and decreases with increasing temperature, which indicates that the surface scattering determines the electrical property of NWs. English KOREAN PHYSICAL SOC TRANSPORT EPITAXY Growth characteristics and electrical properties of diameter-selective InAs nanowires Article 10.3938/jkps.62.1678 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.11, pp.1678 - 1682 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 62 11 1678 1682 scie scopus kci 000320671900016 2-s2.0-84879214178 Physics, Multidisciplinary Physics Article TRANSPORT EPITAXY MOCVD InAs nanowire Field-effect transistor Mobility