Yun, Jin-Mun Noh, Yong-Jin Yeo, Jun-Seok Go, Yeong-Jin Na, Seok-In Jeong, Hyung-Gu Kim, Juhwan Lee, Sehyun Kim, Seok-Soon Koo, Hye Young Kim, Tae-Wook Kim, Dong-Yu 2024-01-20T12:30:16Z 2024-01-20T12:30:16Z 2021-09-01 2013-06 2050-7526 https://pubs.kist.re.kr/handle/201004/128041 The work-function of MoS2 interfacial layers can be efficiently modulated by p-and n-doping treatments. As a result, the PCE of devices with a p-doped MoS2-based HTL is increased from similar to 2.8 to similar to 3.4%. Particularly, after n-doping the PCE was dramatically increased due to the change in work-function compared with un-doped MoS2 thin-films. English ROYAL SOC CHEMISTRY METAL DICHALCOGENIDE NANOSHEETS FIELD-EFFECT TRANSISTORS TO-ROLL FABRICATION GRAPHENE OXIDE Efficient work-function engineering of solution-processed MoS2 thin-films for novel hole and electron transport layers leading to high-performance polymer solar cells Article 10.1039/c3tc30504j 1 JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.24, pp.3777 - 3783 JOURNAL OF MATERIALS CHEMISTRY C 1 24 3777 3783 scie scopus 000319745400002 2-s2.0-84878737270 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article METAL DICHALCOGENIDE NANOSHEETS FIELD-EFFECT TRANSISTORS TO-ROLL FABRICATION GRAPHENE OXIDE