An, C. S. Jang, Y. D. Lee, H. Lee, D. Song, J. D. Choi, W. J. 2024-01-20T12:30:49Z 2024-01-20T12:30:49Z 2021-09-04 2013-05-07 0021-8979 https://pubs.kist.re.kr/handle/201004/128066 Wetting layer (WL) photoluminescence (PL) at 10K dominated the PL spectra of low-density quantum dots (QDs) grown by migration-enhanced epitaxy (MEE), even at very low excitation powers. Long PL rise time at the ground state (GS) of QDs was observed, when carriers are generated in the WL, indicating suppressed carrier capture from the WL into the QDs. Fluctuations in the WL thickness due to WL thinning in the MEE-grown QDs produced strong localization effects. Temperature dependence of the WL PL intensity and the GS PL rise time agreed well with this interpretation. (C) 2013 AIP Publishing LLC. English AMER INST PHYSICS OPTICAL-PROPERTIES TEMPERATURE DEPOSITION Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer Article 10.1063/1.4803493 1 JOURNAL OF APPLIED PHYSICS, v.113, no.17 JOURNAL OF APPLIED PHYSICS 113 17 scie scopus 000319292800334 2-s2.0-84877724684 Physics, Applied Physics Article OPTICAL-PROPERTIES TEMPERATURE DEPOSITION