Yang, Changjae Lee, Sangsoo Shin, Keun-Wook Oh, Sewoung Moon, Daeyoung Kim, Sung-Dae Kim, Young-Woon Kim, Chang-Zoo Park, Won-kyu Choi, Won Jun Park, Jinsub Yoon, Euijoon 2024-01-20T12:30:53Z 2024-01-20T12:30:53Z 2022-01-25 2013-05-01 0022-0248 https://pubs.kist.re.kr/handle/201004/128070 We investigated the deep level photoluminescence and cathodoluminescence emissions from GaInP grown on Ge and Ge-on-Si substrates by metal-organic chemical vapor deposition. Considering the interface condition after the growth of GaInP on Ge, we speculated that the P vacancies and/or Ge atoms from the underlying layer due to interdiffusion were responsible for the deep level emissions. Moreover, the anti-phase boundaries in GaInP, incompletely suppressed even when grown on off-axis Ge substrates, were also responsible for the deep level emissions. (C) 2012 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MOLECULAR-BEAM EPITAXY SOLAR-CELLS LAYERS FILMS GAAS IN0.5GA0.5P DOPANTS GROWTH Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence Article 10.1016/j.jcrysgro.2012.09.012 1 JOURNAL OF CRYSTAL GROWTH, v.370, pp.168 - 172 JOURNAL OF CRYSTAL GROWTH 370 168 172 scie scopus 000317271000037 2-s2.0-84901593054 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article; Proceedings Paper MOLECULAR-BEAM EPITAXY SOLAR-CELLS LAYERS FILMS GAAS IN0.5GA0.5P DOPANTS GROWTH Cathodoluminescence Photoluminescence GaInP Ge Deep levels