Chong, Eugene Kang, Iljoon Park, Chul Hong Lee, Sang Yeol 2024-01-20T12:30:58Z 2024-01-20T12:30:58Z 2021-09-05 2013-05-01 0040-6090 https://pubs.kist.re.kr/handle/201004/128074 We find that an incorporation of the small amount of Si in the ZnSnO stabilizes the device performance significantly. Through the first-principle calculation, we find that the formation of O-deficient states is easily suppressed by Si-doping due to the volume shrinkage effect, which leads to the stable device operation. This behavior is consistent with the X-ray photoelectron spectroscopy measured data. (C) 2013 Elsevier B. V. All rights reserved. English ELSEVIER SCIENCE SA GAAS First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability Article 10.1016/j.tsf.2013.02.033 1 THIN SOLID FILMS, v.534, pp.609 - 613 THIN SOLID FILMS 534 609 613 scie scopus 000317736700102 2-s2.0-84876695304 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article GAAS Oxide semiconductor Thin film transistor In-free Mobility Stability