Jeon, Kun-Rok Min, Byoung-Chul Park, Youn-Ho Park, Seung-Young Shin, Sung-Chul 2024-01-20T12:31:14Z 2024-01-20T12:31:14Z 2021-09-05 2013-05 2469-9950 https://pubs.kist.re.kr/handle/201004/128087 We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle (theta) to the spin direction [the oblique Hanle effect (OHE)] in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of the host SC. Notably, at moderate magnetic fields, the asymptotic values of the oblique Hanle signals (in both contacts) are consistently reduced by a factor of cos(2)(theta) irrespective of the bias current and temperature. These results are in good agreement with predictions of the spin precession and relaxation model for the electrical OHE. At high magnetic fields where the magnetization of CoFe is significantly tilted from the film plane to the magnetic-field direction, we find that the observed angular dependence of voltage signals in the CoFe/MgO/Si and CoFe/MgO/Ge contacts is well explained by the OHE, considering the misalignment angle between the external magnetic field and the magnetization of CoFe. English AMER PHYSICAL SOC Electrical investigation of the oblique Hanle effect in ferromagnet/oxide/semiconductor contacts Article 10.1103/PhysRevB.87.195311 1 Physical Review B, v.87, no.19 Physical Review B 87 19 scie scopus 000319281700001 2-s2.0-84878530636 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article SPIN-INJECTION SILICON SPINTRONICS