Shin, Jae Cheol Kim, Do Yang Park, Jae Hyung Oh, Si Duck Ko, Hang Ju Han, Myung-Soo Kim, Jae Hun Choi, Kyoung Jin Kim, Hyo Jin 2024-01-20T12:31:34Z 2024-01-20T12:31:34Z 2021-09-05 2013-05 1533-4880 https://pubs.kist.re.kr/handle/201004/128105 We have characterized the structural properties of the ternary InxGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 x 10(8)/cm(2). X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW. English AMER SCIENTIFIC PUBLISHERS Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS Article 10.1166/jnn.2013.7301 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.5, pp.3511 - 3514 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 13 5 3511 3514 scie scopus 000319953300064 2-s2.0-84876950111 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper InxGa1-xAs Nanowires Vapor-Liquid-Solid MOCVD