Lee, Chil-Hyoung Choi, Doo-Jin Oh, Young-Jei 2024-01-20T12:32:00Z 2024-01-20T12:32:00Z 2021-09-04 2013-05 1738-8090 https://pubs.kist.re.kr/handle/201004/128128 This paper reports the properties of p-type oxide semiconductor Sn1-x Mn (x) O-2 (MTO) nanoparticles with a low doping concentration of Mn (0 a parts per thousand currency sign x a parts per thousand currency sign 0.05) prepared with a sol-gel method. X-ray diffraction (XRD) results show that single-phase rutile MTO was obtained for x up to 0.03. The samples have particle average size of about 100 nm, which was confirmed with scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The compositional changes and electrical properties of the MTO nanoparticles were characterized by using x-ray photoelectron spectroscopy (XPS) and Hall effect measurements. Mn3+ cations are incorporated into the rutile SnO2 lattice. P-type conduction which is arisen from the substitution of Mn3+ to Sn4+ lattice was demonstrate by Hall data. These compositions have hole carrier concentrations in the range 2.268.53 x 10(16) cm(-3) and exhibit Hall mobilities in the range 0.84.1 cm(2)/Vs. The mobility of MTO decreases as the Mn content increases due to the doping effect. A transparent, ptype TFT device can be fabricated with this composition. English KOREAN INST METALS MATERIALS DOPED SNO2 TIN OXIDE TEMPERATURE FERROMAGNETISM THIN MECHANISM Characterization of the p-type Sn1-x Mn (x) O-2 oxide semiconductor nanoparticles by Sol-Gel method Article 10.1007/s13391-012-2140-9 1 ELECTRONIC MATERIALS LETTERS, v.9, no.3, pp.283 - 286 ELECTRONIC MATERIALS LETTERS 9 3 283 286 scie scopus kci other ART001769159 000319038700006 2-s2.0-84878065540 Materials Science, Multidisciplinary Materials Science Article DOPED SNO2 TIN OXIDE TEMPERATURE FERROMAGNETISM THIN MECHANISM oxide semiconductor nanoparticle Sn1-xMnxO2 p-type mobility