No, Young Soo Park, Dong-Hee Lee, Jeon-Kook Lee, Youn-Seoung Kim, Tae Whan Choi, Won-Kook 2024-01-20T12:32:04Z 2024-01-20T12:32:04Z 2021-09-04 2013-05 0021-4922 https://pubs.kist.re.kr/handle/201004/128132 The effect of electrode materials on resistance switching was evaluated on the Pt/NiO/electrode (EL) structures where the EL contacts were Pt, Al, and indium-tin-oxide (ITO). It was confirmed that ohmic Pt contact needs to induce the effective electric field for resistance switching across the NiO film. For the Pt/NiO/Al structure, the barrier height of the Al Schottky contact was measured as 0.66 eV and no resistance switching was observed owing to a large voltage drop at the rectifying interface induced by the reduction of NiO resulting from the formation of Al oxide. In the ITO (EL)/NiO/Pt structure, the barrier height of the Schottky contact between ITO and NiO was about 0.52 eV and it did not show any resistance switching, either. Through the depth-profile study by X-ray photoelectron spectroscopy, chemical reactions at the interface ITO/NiO was identified to be not too much evolved compared with that of NiO/Al, which might due to be abundant oxygen on the ITO surface. Such Schottky barrier heights 0.52-0.66 eV were considered too high to induce a sufficient electric field in the NiO film causing the resistance switching. (c) 2013 The Japan Society of Applied Physics English IOP PUBLISHING LTD ELECTRODE DEPENDENCE THIN-FILMS GROWTH Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film Article 10.7567/JJAP.52.051102 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.5 JAPANESE JOURNAL OF APPLIED PHYSICS 52 5 scie scopus 000319993800009 2-s2.0-84880905686 Physics, Applied Physics Article ELECTRODE DEPENDENCE THIN-FILMS GROWTH