An, Chengshou Jang, Yudong Lee, Donghan Song, Jindong Choi, Wonjun 2024-01-20T12:32:53Z 2024-01-20T12:32:53Z 2022-01-25 2013-04 0374-4884 https://pubs.kist.re.kr/handle/201004/128169 We have investigated the effects of carrier localization on the migration-enhancing time in a wetting layer (WL) of quantum dots (QDs) grown by using the migration-enhanced epitaxy (MEE) growth technique. The WL photoluminescence (PL) intensity of QD sample grown with a longer migration-enhancing time remained strong even at low excitation densities. The PL decay time at the WL peak was longer for the MEE-grown QD with a longer migration-enhancing time. Moreover, the decay times of MEE-grown QDs across the WL's PL band were longer at longer wavelengths. We conclude that the localization effect in the WL intensifies as the migration-enhancing time is increased. English KOREAN PHYSICAL SOC Carrier dynamics in the wetting layer of InGaAs/GaAs quantum dots grown by using migration-enhanced epitaxy Article 10.3938/jkps.62.1150 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.8, pp.1150 - 1153 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 62 8 1150 1153 N scie scopus kci ART001819465 000318726700013 2-s2.0-84877328702 Physics, Multidisciplinary Physics Article Wetting layer Decay time Quantum dots Migration-enhanced epitaxy