노영수 양정도 박동희 김태환 최지원 최원국 2024-01-20T12:33:08Z 2024-01-20T12:33:08Z 2021-09-06 2013-04 1225-5475 https://pubs.kist.re.kr/handle/201004/128182 We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 μm) showed a subs-threshold swing of 3.78V/dec, a minimum off-current of 10-12 A, a threshold voltage of 0.41 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ratio of 9X 109. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs. English 한국센서학회 Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode Article 10.5369/JSST.2013.22.2.105 2 센서학회지, v.22, no.2, pp.105 - 110 센서학회지 22 2 105 110 kci ART001757101 a-IGZO TFT AZO/Ag/AZO transparent electrode Field effect mobility Schottky barrier