Park, Youn Ho Shin, Sang-Hoon Song, Jin Dong Chang, Joonyeon Han, Suk Hee Choi, Heon-Jin Koo, Hyun Cheol 2024-01-20T12:33:53Z 2024-01-20T12:33:53Z 2021-09-01 2013-04 0038-1101 https://pubs.kist.re.kr/handle/201004/128222 The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 x 10(-11) eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin. (C) 2013 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD 2-DIMENSIONAL ELECTRON-GAS EFFECTIVE-MASS SPIN FIELD Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device Article 10.1016/j.sse.2013.01.016 1 SOLID-STATE ELECTRONICS, v.82, pp.34 - 37 SOLID-STATE ELECTRONICS 82 34 37 scie scopus 000317701500008 2-s2.0-84874674025 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article 2-DIMENSIONAL ELECTRON-GAS EFFECTIVE-MASS SPIN FIELD Rashba effect GaSb p-type quantum well Complementary device Spin transistor