Lee, Woongkyu Han, Jeong Hwan Jeon, Woojin Yoo, Yeon Woo Lee, Sang Woon Kim, Seong Keun Ko, Chang-Hee Lansalot-Matras, Clement Hwang, Cheol Seong 2024-01-20T12:34:10Z 2024-01-20T12:34:10Z 2021-08-31 2013-03-26 0897-4756 https://pubs.kist.re.kr/handle/201004/128233 The characteristics of the atomic layer deposition (ALD) of SrTiO3 (STO) films were examined for metal-insulator-metal capacitors, with Cp-based precursors Sr(iPr(3)Cp)(2) and Cp*Ti(OMe)(3) [Cp* = C-5(CH3)(5)] employed as the Sr and Ti precursors, respectively. While the Sr precursor has a higher reactivity toward oxygen on the Ru substrate compared with another Ti precursor, with a 2,2,6,6-tetramethyl-3,5-heptanedionato ligand, which results in the highly Sr excessive STO film, the enhanced reactivity of the present Ti precursor suppressed the unwanted excessive incorporation of Sr into the film. A possible mechanism for the Sr overgrowth and retardation is suggested in detail. By controlling the subcycle ratio of SrO and TiO2 layers, stoichiometric STO could be obtained, even without employing a deleterious reaction barrier layer. This improved the attainable minimum equivalent oxide thickness of the Pt/STO/RuO2 capacitor to 0.43 nm, with acceptable leakage current density (similar to 8 x 10(-8) A/cm(2)). This indicates an improvement of similar to 25% in the capacitance density compared with previous work. English AMER CHEMICAL SOC THIN-FILMS STRONTIUM THICKNESS Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal-Insulator-Metal Capacitors Article 10.1021/cm304125e 1 CHEMISTRY OF MATERIALS, v.25, no.6, pp.953 - 961 CHEMISTRY OF MATERIALS 25 6 953 961 scie scopus 000316847100019 2-s2.0-84875581622 Chemistry, Physical Materials Science, Multidisciplinary Chemistry Materials Science Article THIN-FILMS STRONTIUM THICKNESS SrTiO3 atomic layer deposition DRAM capacitor Ru RuO2