Jung, Keun Choi, Won-Kook Chae, Keun Hwa Song, Jong-Han Yoon, Seok-Jin Lee, Myung-Hyun Choi, Ji-Won 2024-01-20T12:34:11Z 2024-01-20T12:34:11Z 2021-09-01 2013-03-25 0925-8388 https://pubs.kist.re.kr/handle/201004/128234 Al doped ZnO (AZO) thin films were deposited at room temperature by continuous composition spread method. Various compositions of AZO thin films deposited at room temperature were explored to find excellent electrical and optical properties. The explored composition, 3.13 wt.% Al doped ZnO, was obtained with the lowest resistivity and the highest transmittance. We deposited the optimized AZO composition by on-axis RF sputtering to deposit uniform large area thin film and got a thin film with superior electrical, optical, and damp heat properties although it deposited at room temperature (resistivity: 6.5 x 10(-4) Omega cm, average transmittance in visible region: 92%). (C) 2012 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA AL Highly conductive and damp heat stable transparent ZnO based thin films for flexible electronics Article 10.1016/j.jallcom.2012.11.021 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.554, pp.240 - 245 JOURNAL OF ALLOYS AND COMPOUNDS 554 240 245 scie scopus 000314642200039 2-s2.0-84871447271 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article AL Electrode materials Oxide materials Thin films Electronic properties Optical properties EXAFS