Kim, Seong Keun Kim, Shin-Ik Hwang, Jin-Ha Kim, Jin-Sang Baek, Seung-Hyub 2024-01-20T12:34:18Z 2024-01-20T12:34:18Z 2021-09-01 2013-03-18 0003-6951 https://pubs.kist.re.kr/handle/201004/128239 We performed capacitance-voltage analysis of 5-nm-thick LaAlO3/SrTiO3 heterostructure containing two-dimensional-electron-gas (2DEG) at the interface. The complex impedance of the heterostructure was measured as a function of frequency for a wide range of gate biases. The impedance spectra showed a different behavior above and below an applied voltage of -1.8V. The capacitance determined from the impedance was approximately 1.2 nF above -1.8V and was drastically reduced to similar to 0.01 nF below this voltage, owing to depletion of 2DEG and the insulating SrTiO3 underneath it. This suggests that devices utilizing LaAlO3/SrTiO3 can facilitate switching operations in a very small voltage range. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798334] English AMER INST PHYSICS ELECTRON-GAS HETEROINTERFACE Capacitance-voltage analysis of LaAlO3/SrTiO3 heterostructures Article 10.1063/1.4798334 1 APPLIED PHYSICS LETTERS, v.102, no.11 APPLIED PHYSICS LETTERS 102 11 scie scopus 000316544900066 2-s2.0-84875717721 Physics, Applied Physics Article ELECTRON-GAS HETEROINTERFACE LaAlO3/SrTiO3 2 dimensional electron gas Capacitance-voltage