Kim, Won Mok Kim, Jin Soo Jeong, Jeung-hyun Park, Jong-Keuk Baik, Young-Jun Seong, Tae-Yeon 2024-01-20T12:34:20Z 2024-01-20T12:34:20Z 2021-09-01 2013-03-15 0040-6090 https://pubs.kist.re.kr/handle/201004/128241 Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10(16)-10(21) cm(-3), were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. (C) 2013 Elsevier B. V. All rights reserved. English ELSEVIER SCIENCE SA ZINC-OXIDE FILMS STATES EFFECTIVE-MASS ROOM-TEMPERATURE ELECTRICAL-PROPERTIES SCATTERING PARAMETER TRANSPORT PHENOMENA INDIUM OXIDE TRANSPARENT SEMICONDUCTORS DEPOSITION Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters Article 10.1016/j.tsf.2013.01.078 1 THIN SOLID FILMS, v.531, pp.430 - 435 THIN SOLID FILMS 531 430 435 scie scopus 000316677900066 2-s2.0-84875421406 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article ZINC-OXIDE FILMS STATES EFFECTIVE-MASS ROOM-TEMPERATURE ELECTRICAL-PROPERTIES SCATTERING PARAMETER TRANSPORT PHENOMENA INDIUM OXIDE TRANSPARENT SEMICONDUCTORS DEPOSITION ZnO thin film Optical band-gap Nonparabolicity