Kim, T. J. Yoon, J. J. Byun, J. S. Hwang, S. Y. Aspnes, D. E. Shin, S. H. Song, J. D. Liang, C. -T. Chang, Y. -C. Barange, N. S. Kim, J. Y. Kim, Y. D. 2024-01-20T12:34:29Z 2024-01-20T12:34:29Z 2021-09-01 2013-03-11 0003-6951 https://pubs.kist.re.kr/handle/201004/128248 We report pseudodielectric functions of In1-xGaxSb ternary alloy films from 1.5 to 6.0 eV determined by spectroscopic ellipsometry. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations. The E-2' and E-2+Delta(2) CP energies cross with increasing In content as a result of increasing spin-orbit splitting Delta(2). (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795622] English AMER INST PHYSICS INSB GASB GAP CONSTANTS INAS GAAS INP SI Interband transitions and dielectric functions of InGaSb alloys Article 10.1063/1.4795622 1 APPLIED PHYSICS LETTERS, v.102, no.10 APPLIED PHYSICS LETTERS 102 10 scie scopus 000316501200036 2-s2.0-84875132052 Physics, Applied Physics Article INSB GASB GAP CONSTANTS INAS GAAS INP SI