Rha, Sang Ho Kim, Un Ki Jung, Jisim Kim, Hyo Kyeom Jung, Yoon Soo Hwang, Eun Suk Chung, Yoon Jang Lee, Mijung Choi, Jung-Hae Hwang, Cheol Seong 2024-01-20T13:00:21Z 2024-01-20T13:00:21Z 2021-09-01 2013-03 0018-9383 https://pubs.kist.re.kr/handle/201004/128287 Asymmetric Schottky contact thin-film-transistors (ASC-TFTs) with an amorphous-In2Ga2ZnO7 channel were fabricated, and their operation characteristics were examined. Ti, Ni, and Pt were evaluated as source/drain metal, and the variations in the device performance were analyzed in terms of energy level and bias polarity, which were carefully simulated to understand the influence of the contact properties on the device performance. The contact nature largely influenced the distribution of potential under the given gate and drain biases, as well as the accompanying carrier accumulation layer and current path formation. Schottky-type contact induced conduction path formation even on the back surface of the channel when drain voltage was high even with sufficiently high gate bias being applied. Based on these results, by applying different metal for each source and drain metal, ASC-TFTs integrating TFTs and Schottky diodes were fabricated, which showed a rectification ratio of drain current higher than 10(8) according to the bias direction. In addition, the transfer and output characteristics of ASC-TFTs were evaluated for various operation regimes, and the roles of the Schottky junction in device operation were studied in detail. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC SERIES-RESISTANCE OXIDE ELECTRODES INTERFACE The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7 Article 10.1109/TED.2012.2236558 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.3, pp.1128 - 1135 IEEE TRANSACTIONS ON ELECTRON DEVICES 60 3 1128 1135 scie scopus 000316820000033 2-s2.0-84874662315 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article SERIES-RESISTANCE OXIDE ELECTRODES INTERFACE Amorphous indium-gallium-zinc oxide (a-IGZO) Schottky contact thin-film transistors (TFTs)