Lee, Ki-Seung Lee, Seo-Won Min, Byoung-Chul Lee, Kyung-Jin 2024-01-20T13:00:38Z 2024-01-20T13:00:38Z 2021-09-01 2013-03 0003-6951 https://pubs.kist.re.kr/handle/201004/128302 We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that in the high damping regime, the threshold switching current is independent of the damping constant and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. Based on the expression, we find that magnetization switching induced by the spin Hall effect can be practically useful when it is combined with voltage-controlled anisotropy change. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798288] English AMER INST PHYSICS Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect Article 10.1063/1.4798288 1 APPLIED PHYSICS LETTERS, v.102, no.11 APPLIED PHYSICS LETTERS 102 11 scie scopus 000316544900057 2-s2.0-84875696751 Physics, Applied Physics Article TUNNEL-JUNCTIONS TRANSFER-TORQUE VOLTAGE-DEPENDENCE ANISOTROPY REVERSAL