Yeo, C. S. Chung, Kwun-Bum Song, J. H. Chae, K. H. Park, Jin-Seong Song, J. -H. Park, Sang Han Cho, Mann-Ho 2024-01-20T13:00:50Z 2024-01-20T13:00:50Z 2021-09-01 2013-03 0374-4884 https://pubs.kist.re.kr/handle/201004/128313 The effects of different irradiation doses of hydrogen ions on TiO2-x semiconductor films were investigated. The total doses were controlled between similar to 10(14) and similar to 10(15) atom/cm(2) at an acceleration energy of 110 keV. The Hall mobility was manipulated by changing the irradiation dose while the carrier concentration was not. The amorphous crystal structure was consistently maintained upon irradiation. The electronic structures of the molecular orbitals in the conduction band were modified, and the band edge states below the conduction band increased with increasing irradiation dose. These changes in electronic structure were correlated to the chemical bonding states and could lead to variations in the Hall mobility without a structural transformation. English KOREAN PHYSICAL SOC THIN-FILMS TRANSPARENT TRANSISTORS PHOTOCATALYSIS FABRICATION KINETICS Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation Article 10.3938/jkps.62.781 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.5, pp.781 - 786 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 62 5 781 786 scie scopus kci ART001759347 000316361100012 2-s2.0-84874983149 Physics, Multidisciplinary Physics Article THIN-FILMS TRANSPARENT TRANSISTORS PHOTOCATALYSIS FABRICATION KINETICS Ion irradiation TiO2-x Hydrogen ion