Kim, Seong Keun Choi, Byung Joon Yoon, Kyung Jean Yoo, Yeon Woo Hwang, Cheol Seong 2024-01-20T13:01:33Z 2024-01-20T13:01:33Z 2021-09-01 2013-02-25 0003-6951 https://pubs.kist.re.kr/handle/201004/128348 The influences of the conducting oxide layer and phases of TiO2 on the electroforming behavior of TiO2 films on Ru were studied for unipolar resistive switching. The thin RuO2 layer makes the conducting filaments (CF) too strong due to a limited oxygen supply and accompanying high power consumption. When the oxygen supply was too high (TiO2 film on thick RuO2), CF formation was essentially disturbed and no switching occurs. The phase of TiO2 does not have any relevance to the resistance switching. Fluent and uniform switching was achieved by spatially confining the CF to a local area. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793577] English AMER INST PHYSICS RU ELECTRODE DEPOSITION GROWTH MEMORY Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode Article 10.1063/1.4793577 1 APPLIED PHYSICS LETTERS, v.102, no.8 APPLIED PHYSICS LETTERS 102 8 scie scopus 000315597000059 2-s2.0-84874878129 Physics, Applied Physics Article RU ELECTRODE DEPOSITION GROWTH MEMORY Resistive switching TiO2 memory