Kim, Byung-Hyun Kim, Gyubong Park, Kihoon Shin, Mincheol Chung, Yong-Chae Lee, Kwang-Ryeol 2024-01-20T13:02:12Z 2024-01-20T13:02:12Z 2022-01-25 2013-02 0021-8979 https://pubs.kist.re.kr/handle/201004/128380 A multi-scale approach connecting the atomistic process simulations to the device-level simulations has been applied to the Si(100)/SiO2 interface system. The oxidation of Si(100) surface was simulated by the atomic level molecular dynamics, the electronic structure of the resultant Si/suboxide/SiO2 interface was then obtained by the first-principles calculations, and finally, the leakage currents through the SiO2 gate dielectric were evaluated, with the obtained interface model, by the non-equilibrium Green's function method. We have found that the suboxide layers play a significant role for the electronic properties of the interface system and hence the leakage currents through the gate dielectric. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791706] English AMER INST PHYSICS Effects of suboxide layers on the electronic properties of Si(100)/SiO2 interfaces: Atomistic multi-scale approach Article 10.1063/1.4791706 1 JOURNAL OF APPLIED PHYSICS, v.113, no.7 JOURNAL OF APPLIED PHYSICS 113 7 N scie scopus 000315262800025 2-s2.0-84874608938 Physics, Applied Physics Article