Cao, Haining Pamungkas, Mauludi Ariesto Kim, Byung-Hyun Lee, Kwang-Ryeol 2024-01-20T13:02:16Z 2024-01-20T13:02:16Z 2022-01-25 2013-02 1533-4880 https://pubs.kist.re.kr/handle/201004/128383 We have studied the very early stage of the room temperature oxidation of the externally-strained Si(001) surface using molecular dynamics simulation. It was found that the different treatment history of the sample under the same strain resulted in the difference in the number density of dimer. The as-prepared samples of different treatment history with 12.15% strain were used to investigate the initial oxidation behavior of Si(001). 500 times of independent deposition of single oxygen molecule onto the random position of clean Si(001) surface was simulated. Oxidation behavior was statistically analyzed for various dimer density of the surface which is dependent on strain-treatment history. Oxygen uptake and penetration depth profile showed an important role of dimers on the surface oxidation behavior. English AMER SCIENTIFIC PUBLISHERS THERMAL-OXIDATION SILICON STRESS FIELD A Molecular Dynamics Simulation Study on the Initial Stage of Si(001) Oxidation Under Biaxial Strain Article 10.1166/jnn.2013.6120 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.2, pp.1074 - 1077 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 13 2 1074 1077 scie scopus 000318254500070 2-s2.0-84876279550 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper THERMAL-OXIDATION SILICON STRESS FIELD Molecular Dynamics Simulation (MD) Si(001) Oxidation Strain Stress Dimer