Kim, Seong Keun Kim, Kyung Min Jeong, Doo Seok Jeon, Woojin Yoon, Kyung Jean Hwang, Cheol Seong 2024-01-20T13:02:48Z 2024-01-20T13:02:48Z 2021-09-01 2013-02 0884-2914 https://pubs.kist.re.kr/handle/201004/128411 The synthesis, structure, and electrical performances of titanium dioxide (TiO2 and also doped TiO2) thin films, a capacitor dielectric for dynamic random access memory (DRAM) and a resistance switching material in resistance switching RAM (ReRAM), are reviewed. The three-dimensionality of these structures and the extremely small feature sizes (<20 nm) of these memory devices require the synthesis method of TiO2-based layers to exhibit high degree of conformality. Atomic layer deposition is, therefore, the method of choice in respect of film growth for these applications. The unique arrangement of the TiO6-octahedra in the rutile structure, which results in the value for dielectric constant of the dielectric layer, epsilon(r) (> 100), makes the material especially attractive as the capacitor dielectric layer in DRAM. Removing some of the oxygen ions from the rutile structure and arranging the resulting oxygen vacancies on a specific crystallographic plane results in the so called Magneli phase materials, which show distinctive conducting semiconductor or metallic characteristics. External electrical stimuli can cause the repeated formation and rupture of conducting channels that consist of these Magneli phase materials in the insulating TiO2 matrix, and this aspect makes the material a very feasible choice for applications in ReRAM. This article reviews the material properties, fabrication process, integration issues, and prospect of TiO2 films for these applications. English CAMBRIDGE UNIV PRESS ATOMIC LAYER DEPOSITION DOPED TIO2 FILMS RU ELECTRODE GROWTH IDENTIFICATION TEMPERATURE THICKNESS HOLES NM Titanium dioxide thin films for next-generation memory devices Article 10.1557/jmr.2012.231 1 JOURNAL OF MATERIALS RESEARCH, v.28, no.3, pp.313 - 325 JOURNAL OF MATERIALS RESEARCH 28 3 313 325 scie scopus 000314421700006 2-s2.0-84873293107 Materials Science, Multidisciplinary Materials Science Article ATOMIC LAYER DEPOSITION DOPED TIO2 FILMS RU ELECTRODE GROWTH IDENTIFICATION TEMPERATURE THICKNESS HOLES NM High εr material Resistance switching TiO2