Bae, Joohyung Kim, Kyung-Ho Han, Jung-Min Koo, Hyun Cheol Min, Byoung-Chul Kim, Hyung-jun Chang, Joonyeon Han, Suk Hee Lim, Sang Ho 2024-01-20T13:02:51Z 2024-01-20T13:02:51Z 2021-09-01 2013-02 0003-6951 https://pubs.kist.re.kr/handle/201004/128413 The transport of perpendicular spins in a GaAs channel is investigated via a fully electrical method. A Tb20Fe62Co18/Co40Fe40B20/MgO contact is used to inject perpendicular spin into the GaAs channel, where the Tb20Fe62Co18 layer produces perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization of the injection current. By measuring the three-terminal Hanle effect with an in-plane field, we obtained a spin signal of 0.65 Omega (0.04 Omega) and a spin lifetime of 0.30 ns (0.17 ns) at 1.8 K (300 K). The observed spin signal with a MgO barrier is more than double of that without a MgO barrier. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792690] English AMER INST PHYSICS Transport of perpendicular spin in a semiconductor channel via a fully electrical method Article 10.1063/1.4792690 1 APPLIED PHYSICS LETTERS, v.102, no.6 APPLIED PHYSICS LETTERS 102 6 scie scopus 000315053300053 2-s2.0-84874278772 Physics, Applied Physics Article ROOM-TEMPERATURE INJECTION GAAS ANISOTROPY JUNCTION CONTACTS SILICON perpendicular spin spin injection Hanle effect