Jung, Chan Su Kim, Han Sung Im, Hyung Soon Seo, Young Seok Park, Kidong Back, Seung Hyuk Cho, Yong Jae Kim, Chang Hyun Park, Jeunghee Ahn, Jae-Pyoung 2024-01-20T13:02:56Z 2024-01-20T13:02:56Z 2021-09-01 2013-02 1530-6984 https://pubs.kist.re.kr/handle/201004/128418 Scaling-down of phase change materials to a nanowire (NW) geometry is critical to a fast switching speed of nonvolatile memory devices. Herein, we report novel composition-phase-tuned GeSbTe NWs, synthesized by a chemical vapor transport method, which guarantees promising. applications in the field of nanoscale electric devices. As the Sb content increased, they showed a distinctive rhombohedral-cubic-rhombohedral phase evolution. Remarkable superlattice structures were identified for the Ge8Sb2Te11, Ge3Sb2Te6, Ge3Sb8Te6, and Ge2Sb7Te4 NWs. The coexisting cubic-rhombohedral phase Ge3Sb2Te6 NWs exhibited an exclusively uniform superlattice structure consisting of 2.2 nm period slabs. The rhombohedral phase Ge3Sb8Te6 and Ge2Sb7Te4 NWs adopted an innovative structure; 3Sb(2) layers intercalated the Ge3Sb2Te6 and Ge2Sb1Te4 domains, respectively, producing 3.4 and 2.7 nm period slabs. The current-voltage measurement of the individual NW revealed that the vacancy layers of Ge8Sb2Te11 and Ge3Sb2Te6 decreased the electrical conductivity. English AMER CHEMICAL SOC TRANSMISSION ELECTRON-MICROSCOPY THIN-FILMS PHASE TEMPERATURE VACANCIES SYSTEM MEMORY SERIES GETE Polymorphism of GeSbTe Superlattice Nanowires Article 10.1021/nl304056k 1 NANO LETTERS, v.13, no.2, pp.543 - 549 NANO LETTERS 13 2 543 549 scie scopus 000315079500036 2-s2.0-84873620335 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article TRANSMISSION ELECTRON-MICROSCOPY THIN-FILMS PHASE TEMPERATURE VACANCIES SYSTEM MEMORY SERIES GETE GeSbTe nanowires polymorphism superlattices phase change cubicrhombohedral transition