Shin, Tae Hee Ha, Jong-Yoon Song, Hyun Cheol Yoon, Seok-Jin Hwang, Seong-Ju Nahm, Sahn Park, Hyung-Ho Choi, Ji-Won 2024-01-20T13:03:07Z 2024-01-20T13:03:07Z 2021-09-01 2013-02 0002-7820 https://pubs.kist.re.kr/handle/201004/128427 Piezoelectric properties of screen-printed thick films, 0.01Pb(Mg1/2W1/2)O30.41Pb(Ni1/3Nb2/3)O30.35PbTiO30.23PbZrO3+ 0.1wt% Y2O3+1.5wt% ZnO (PMWPNNPTPZ+YZ) on alumina (Al2O3) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMWPNNPTPZ+YZ thick films, the Al2O3 buffer layers on silicon (Si) substrates were used. The Al2O3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMWPNNPTPZ+YZ thick films with 900nm thick Al2O3 buffer layer showed piezoelectric properties such as Pr=32C/cm2, Ec=25kV/cm, and d33=32pC/N. These significant piezoelectric properties of our screen-printed PMWPNNPTPZ+YZ thick films by the Al2O3 buffer layers can be applied to functional thick film in many micro-electromechanical system (MEMS) applications such as micro actuators and sensors. English WILEY FABRICATION Role of Alumina Buffer Layer on the Dielectric and Piezoelectric Properties of PZT System Thick Films Article 10.1111/jace.12052 1 JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.96, no.2, pp.491 - 495 JOURNAL OF THE AMERICAN CERAMIC SOCIETY 96 2 491 495 scie scopus 000314922200029 2-s2.0-84873713889 Materials Science, Ceramics Materials Science Article FABRICATION Piezoelectric Buffer layer PMW-PNN-PT-PZ-YZ Thick films Al2O3