Lee, Jin-Wook Son, Dae-Yong Ahn, Tae Kyu Shin, Hee-Won Kim, In Young Hwang, Seong-Ju Ko, Min Jae Sul, Soohwan Han, Hyouksoo Park, Nam-Gyu 2024-01-20T13:03:41Z 2024-01-20T13:03:41Z 2021-09-01 2013-01-10 2045-2322 https://pubs.kist.re.kr/handle/201004/128455 The reported photocurrent density (J(SC)) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm(2) despite the capability to generate 38 mA/cm(2), which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J(SC) of 30 mA/cm(2). By Hg2+ doping into PbS, J(SC) is almost doubled with improved stability. Femtosecond transient study confirms that the improved J(SC) is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J(SC), power conversion efficiency of 5.6% is demonstrated at one sun illumination. English NATURE PUBLISHING GROUP ELECTRON INJECTION EFFICIENCY ARRAYS FILMS PBS Quantum-Dot-Sensitized Solar Cell with Unprecedentedly High Photocurrent Article 10.1038/srep01050 1 SCIENTIFIC REPORTS, v.3 SCIENTIFIC REPORTS 3 scie scopus 000313418100005 2-s2.0-84872713504 Multidisciplinary Sciences Science & Technology - Other Topics Article ELECTRON INJECTION EFFICIENCY ARRAYS FILMS PBS Quantum Dot Sensitized solar cell photocurrent