Heo, Duchang Song, Jin Dong Han, Il Ki Choi, Won Jun Lee, Yong Tak 2024-01-20T13:04:03Z 2024-01-20T13:04:03Z 2021-09-05 2013-01 0018-9197 https://pubs.kist.re.kr/handle/201004/128472 We report full digital-alloy In(Ga1-zAlz)As/InP multiple-quantum well 1.35-mu m laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs of InGaAs/InAlAs (1.5 nm/0.375 nm) and four pairs of InGaAs/InAlAs (0.66 nm/0.98 nm). The separate confinement layer consists of two 60 pairs of InGaAs/InAlAs (0.66 nm/0.98 nm) and makes for an optical confinement factor of 7.07%. We obtained a continuous wave of 200 mW from a single cleaved facet of 1.6-mm long broad area LDs, with 100-mu m aperture width at 10 degrees C, and high characteristic temperature T-0 of 70 K. In this paper, we find that, with the MBE, the full digital-alloy technique makes bandgap engineering possible through the entire LD structure with only InGaAs/InAlAs short-period superlattices pairs. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC OPTICAL-PROPERTIES LOW-THRESHOLD HIGH-POWER OPERATION WELLS Design and Fabrication of 1.35-mu m Laser Diodes With Full Digital-Alloy InGaAlAs MQW Article 10.1109/JQE.2012.2226018 1 IEEE JOURNAL OF QUANTUM ELECTRONICS, v.49, no.1, pp.24 - 30 IEEE JOURNAL OF QUANTUM ELECTRONICS 49 1 24 30 scie scopus 000311842500004 2-s2.0-84870502056 Engineering, Electrical & Electronic Quantum Science & Technology Optics Physics, Applied Engineering Physics Optics Article OPTICAL-PROPERTIES LOW-THRESHOLD HIGH-POWER OPERATION WELLS Digital alloy technique laser diode molecular beam epitaxy short-period superlattice