Rahayu, Rheza Kang, Min-Gyu Do, Young-Ho Hwang, Jin-Ha Kang, Chong-Yun Yoon, Seok-Jin 2024-01-20T13:04:43Z 2024-01-20T13:04:43Z 2021-09-01 2013-01 0741-3106 https://pubs.kist.re.kr/handle/201004/128508 The single-layer 400 mu m x 200 mu m sized Ba0.6Sr0.4TiO3 thin-film embedded chip capacitors with two external electrodes fabricated on the surface of the chip capacitors have been demonstrated. The structure of the external electrodes placed on the same surface allows the reduction of connection length, resulting in low parasitic loss and noise of elecronic devices. The fabricated chip capacitors exhibited excellent electrical properties such as high capacitance density and dielectric constant (1687 nF/cm(2) and 452) and a low dielectric loss of 0.052 at 1 kHz, respectively. In addition, the chip capacitors exhibited the superior temperature stability of X5R (Delta C/C = +/- 15% at -55 degrees C to +85 degrees C) characteristics. Such a low leakage current density of similar to 0.15 mu A/cm(2) at 3 V and a high breakdown voltage of 19.75 V were obtained as well. In conclusion, the chip capacitors are suggested as a candidate for the applications of embedded passive components. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC TEMPERATURE DEPENDENCE Electrical Characteristics of Ba0.6Sr0.4TiO3 Thin-Film Chip Capacitors for Embedded Passive Components Article 10.1109/LED.2012.2224088 1 IEEE ELECTRON DEVICE LETTERS, v.34, no.1, pp.99 - 101 IEEE ELECTRON DEVICE LETTERS 34 1 99 101 scie scopus 000312834200033 2-s2.0-84871726680 Engineering, Electrical & Electronic Engineering Article TEMPERATURE DEPENDENCE BST capacitors embedded thin films