Kim, D. K. Cho, J. U. Chun, B. S. Shin, K. H. Lee, K. J. Tsunoda, M. Takahashi, M. Kim, Y. K. 2024-01-20T13:30:54Z 2024-01-20T13:30:54Z 2021-09-05 2012-12-03 0003-6951 https://pubs.kist.re.kr/handle/201004/128560 We report the transport properties of a dual MgO barrier magnetic tunnel junction (DMTJ) where a FeNiSiB layer was inserted in a CoFeB free layer. Upon post-deposition annealing at 330 degrees C, the tunneling magnetoresistance (TMR) ratio of the DMTJ with a hybrid CoFeB/FeNiSiB/CoFeB free layer reached 195% which is higher than the TMR ratio of 121% from the DMTJ with the single CoFeB free layer. The bias voltage dependence profile was more symmetric for the hybrid case. Boron depth profiling result suggests that the FeNiSiB layer dragged boron atoms more to it rather than letting them diffuse toward CoFeB/MgO interfaces, resulting in improved MTJ performances. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768931] English AMER INST PHYSICS CRYSTALLIZATION Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers Article 10.1063/1.4768931 1 APPLIED PHYSICS LETTERS, v.101, no.23 APPLIED PHYSICS LETTERS 101 23 scie scopus 000312243900042 2-s2.0-84870934793 Physics, Applied Physics Article CRYSTALLIZATION