Rha, Sang Ho Jung, Jisim Jung, Yoonsoo Chung, Yoon Jang Kim, Un Ki Hwang, Eun Suk Park, Byoung Keon Park, Tae Joo Choi, Jung-Hae Hwang, Cheol Seong 2024-01-20T13:32:05Z 2024-01-20T13:32:05Z 2021-09-04 2012-12 0018-9383 https://pubs.kist.re.kr/handle/201004/128621 The transmission-line method (TLM) was adopted to clarify the causes of device performance variation according to the source/drain metal electrode and device structure of a thin-film transistor using an amorphous indium-gallium-zinc-oxide channel. Using the TLM, the channel characteristics independent of contact resistance were extracted for the two different contact metals, i.e., Ti and Mo. Based on these results, the mobility characteristics were compared in terms of device scaling and contact structure in the source/drain overlap region. In addition, the transport characteristics according to the contact structure of the source/drain metal electrode were investigated in detail and reproduced using the simulation model. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC THIN-FILM TRANSISTORS GA-ZN-O OXIDE SEMICONDUCTOR SERIES-RESISTANCE Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs Article 10.1109/TED.2012.2220367 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.12, pp.3357 - 3363 IEEE TRANSACTIONS ON ELECTRON DEVICES 59 12 3357 3363 scie scopus 000311680400030 2-s2.0-84870295858 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article THIN-FILM TRANSISTORS GA-ZN-O OXIDE SEMICONDUCTOR SERIES-RESISTANCE Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) transmission-line method (TLM)