Ha, Tae-Jung Kim, Hyung Keun Choi, Doo Jin Shin, Sangwoo Cho, Hyung Hee Jang, Ho Won Yoon, Seok-Jin Park, Hyung-Ho 2024-01-20T13:32:43Z 2024-01-20T13:32:43Z 2021-09-05 2012-11-15 1387-1811 https://pubs.kist.re.kr/handle/201004/128649 This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO2 films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO2 films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation. (C) 2012 Elsevier Inc. All rights reserved. English ELSEVIER THERMAL-CONDUCTIVITY DIELECTRIC-CONSTANT THIN-FILMS STABILITY Application of ordered mesoporous SiO2 film for low power consumption in phase-change memory Article 10.1016/j.micromeso.2012.07.039 1 MICROPOROUS AND MESOPOROUS MATERIALS, v.163, pp.321 - 325 MICROPOROUS AND MESOPOROUS MATERIALS 163 321 325 scie scopus 000309625800040 2-s2.0-84864961590 Chemistry, Applied Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article THERMAL-CONDUCTIVITY DIELECTRIC-CONSTANT THIN-FILMS STABILITY Ordered mesoporous film Phase-change memory Low power consumption Thermal insulation