Moon, Pilkyung Lee, J. D. Ha, S. K. Lee, E. H. Choi, W. J. Song, J. D. Kim, J. S. Dang, L. S. 2024-01-20T13:33:30Z 2024-01-20T13:33:30Z 2021-09-05 2012-11 1862-6254 https://pubs.kist.re.kr/handle/201004/128688 We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy, and obtained the geometries of the dots by scanning transmission electron microscopy. Post-growth thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We measured the emission energy shifts of the dots and the underlying superlattice by post- growth thermal annealing, and specified the emission from dots by selectively etching the structure down to a low layer of quantum dots. We studied the influence of the degree of annealing on the optical properties of the dots from the peak shifts of the superlattice, since the superlattice has a uniform and well-defined geometry. (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim English WILEY-V C H VERLAG GMBH OPTICAL-PROPERTIES GAAS DENSITY The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy Article 10.1002/pssr.201206369 1 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.445 - 447 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 6 11 445 447 scie scopus 000311108200016 2-s2.0-84869126850 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article OPTICAL-PROPERTIES GAAS DENSITY droplet epitaxy annealing luminescence quantum dots GaAs AlGaAs