Baek, Seung-Hyub Rzchowski, Mark S. Aksyuk, Vladimir A. 2024-01-20T13:33:42Z 2024-01-20T13:33:42Z 2021-09-05 2012-11 0883-7694 https://pubs.kist.re.kr/handle/201004/128699 Microelectromechanical systems (MEMS) incorporating piezoelectric layers provide active transduction between electrical and mechanical energy, which enables highly sensitive sensors and low-voltage driven actuators surpassing the passive operation of electrostatic MEMS. Several different piezoelectric materials have been successfully integrated into MEMS structures, most notably Pb(Zr,Ti)O-3. Piezoelectric materials with larger piezoelectric response, such as the relaxor ferroelectric Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT), would enable further miniaturization. However, this has long been hampered by the difficulties in the synthesis of these materials. This article reviews recent successes not only in synthesizing high-quality epitaxial PMN-PT heterostructures on Si, but also in fabricating PMN-PT microcantilevers, which retain the piezoelectric properties of bulk PMN-PT single crystals. These epitaxial heterostructures provide a platform to build MEMS and nanoelectromechanical system devices that function with large displacement at low drive voltages, such as ultrasound medical imagers, micro-fluidic control, piezotronics, and energy harvesting. English CAMBRIDGE UNIV PRESS EPITAXIAL PB(MG1/3NB2/3)O-3-PBTIO3 FILMS FERROELECTRIC PROPERTIES DESIGN MEMS SI FABRICATION DEPOSITION STRAIN SRTIO3 OXIDES Giant piezoelectricity in PMN-PT thin films: Beyond PZT Article 10.1557/mrs.2012.266 1 MRS BULLETIN, v.37, no.11, pp.1022 - 1029 MRS BULLETIN 37 11 1022 1029 scie scopus 000311050200014 2-s2.0-84869034250 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article EPITAXIAL PB(MG1/3NB2/3)O-3-PBTIO3 FILMS FERROELECTRIC PROPERTIES DESIGN MEMS SI FABRICATION DEPOSITION STRAIN SRTIO3 OXIDES