Kim, D. H. You, J. H. Kim, T. W. Song, J. D. Yoo, K. H. Kim, S. Y. 2024-01-20T13:33:45Z 2024-01-20T13:33:45Z 2021-09-05 2012-11 0374-4884 https://pubs.kist.re.kr/handle/201004/128702 Strained InGaAlP/In0.5Al0.5P multiple quantum wells (MQWs) with digital alloy wells made of alternating 3-monolayer In0.5Ga0.5P and 2-monolayer In0.5Al0.5P layers were grown by using molecular-beam epitaxy. The electronic subband energy states and the interband transition energies of the InGaAlP/InAlP MQWs were calculated by using the finite element method to solve the Schrodinger equation in an 8-band envelope function approximation including the strain effects. The calculated interband transitions of the InGaAlP/InAlP MQWs were in reasonable agreement with the excitonic transitions obtained from the photoluminescence spectra. English KOREAN PHYSICAL SOC SUBMONOLAYER SUPERLATTICES LASERS BARRIERS GROWTH MBE Electronic states and interband transitions of strained InzGaxAl1-z-xP/In0.5Al0.5P multiple quantum wells Article 10.3938/jkps.61.1724 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.10, pp.1724 - 1727 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 61 10 1724 1727 scie scopus kci ART001717806 000312341100036 2-s2.0-84870772175 Physics, Multidisciplinary Physics Article; Proceedings Paper SUBMONOLAYER SUPERLATTICES LASERS BARRIERS GROWTH MBE InzGaxAl1-z-xP/InAlP MQWs Electronic state Interband transition Excitonic transition