Oh, Kiwon Jeon, Woojin Lee, Sang-Soo 2024-01-20T13:33:48Z 2024-01-20T13:33:48Z 2021-09-05 2012-11 1944-8244 https://pubs.kist.re.kr/handle/201004/128704 A nanocomposite capable of showing a resistance-switching behavior is prepared using novel resistance-switchable fillers embedded in a polymer matrix. The filler in this study employs a conformal passivation layer of highly crystalline TiO2 on surfaces of conductive Ag nanowires to effectively gate electron flows delivered through the conductive core, resulting in an excellent resistance-switching performance. A nanocomposite prepared by controlled mixing of the resistance-switchable nanowires with a polymer matrix successfully exhibited a resistance-switching behavior of highly enhanced reliability and a resistance on/off ratio, along with flexibility due to the presence of nanowires of a tiny amount. The advantages of our approach include a simple and low-cost fabrication procedure along with sustainable performances suitable for a resistance-switching random-access-memory application. English American Chemical Society MEMORY OXIDE One-Dimensional TiO2@Ag Nanoarchitectures with Interface-Mediated Implementation of Resistance-Switching Behavior in Polymer Nanocomposites Article 10.1021/am301362f 1 ACS Applied Materials & Interfaces, v.4, no.11, pp.5727 - 5731 ACS Applied Materials & Interfaces 4 11 5727 5731 scie scopus 000311521900002 2-s2.0-84870493286 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article MEMORY OXIDE resistance-switching random access memory conductive nanowires passivation nanocomposites