Lee, Ji Yeong Seong, Won Kyung Joe, Minwoong Lee, Kwang-Ryeol Park, Jong-Ku Moon, Myoung-Woon Yang, Cheol-Woong 2024-01-20T13:34:09Z 2024-01-20T13:34:09Z 2021-09-05 2012-11 0142-2421 https://pubs.kist.re.kr/handle/201004/128723 We report a phenomenological study of Cu(In,Ga)Se2 (CIGS) dots and their morphological transition into nano-ridge shapes induced by application of a focused ion beam (IB) to CIGS film. Real-time observations of nano-structure evolution during IB irradiation were obtained by recording sequential images at various ion energies of 1 to 30 keV. We observed that as irradiation time increased, the dots became larger and developed elongated ridge structures under continuous sputtering. This transition process was induced by a combination of the Ostwald ripening processes and cluster diffusion. Compositional analysis revealed that the nano-dots changed from pristine CIGS to Cu-rich CIGS. The Ga content of the dots was also found to increase due to sputtered implantation, while levels of In and Se decreased. Copyright (C) 2012 John Wiley & Sons, Ltd. English WILEY In-situ observation of ion beam-induced nanostructure formation on a Cu(In,Ga)Se2 Surface Article 10.1002/sia.4996 1 SURFACE AND INTERFACE ANALYSIS, v.44, no.11-12, pp.1542 - 1546 SURFACE AND INTERFACE ANALYSIS 44 11-12 1542 1546 scie scopus 000311383700039 2-s2.0-84882449648 Chemistry, Physical Chemistry Article; Proceedings Paper CIGS FIB self-assembly nanostructure in-situ SEM